Analysis and modelling of the electric field in the Gate oxide of 4H-SiC DMOSFET

For the first time, we report an analytical model of the electric field in the gate oxide of power DMOSFETs. The model describes the dependency of E
_OX
on doping concentrations and thicknesses of the drift-region as well as on the JFET-region geometry when reverse bias is applied to the device. There are not fitting parameters in the equations so that the model can be used as an a priori tool of analysis for reverse behaviour. Comparisons with numerical simulations are reported in order to show the goodness of the model results.