GaN low noise amplifier design for WiMax applications

This paper presents a design for 1-6 GHz low noise amplifier (LNA) based on cascade GaN HEMTs with LC ladder input matching and stabilizing output impedance. The designed LNA is simulated using Advanced Design Software (ADS) based on a commercial packaged transistor from Cree Inc. The LNA shows a maximum noise figure of 2.95 dB in the 1-6 GHz range with a gain of 14 dB. It also has a maximum S
₁₁
of -2.4 dB, an input IP3 of 29.4 dBm and is unconditionally stable over the whole bandwidth while drawing 13 Watts of DC power. The designed LNA also shows high linearity with more than 60 dBc carrier-to-intermediation distortion.