Nonlinear modeling of a SiGe HBT with applications to ultra low phase noise dielectric resonator oscillators

We propose a large signal model for a packaged SiGe heterojunction bipolar transistor. Pulsed I-V measurements are used to avoid thermal effects. The current model yields excellent correlation with pulsed output characteristics and S-parameters up to 18 GHz. The model's validity is established by designing ultra low phase noise C and X band dielectric resonator oscillators (DROs).