Performance of a new gate drive controller for improving IGBT switching trajectory

This paper presents a new active gate control (AGC) approach for improving the switching behavior of insulated gate bipolar transistors (IGBTs). The proposed controller is applied on the gate driver (GD) of IGBT, which is based on Posicast control method. The reduction of stress in transient conditions without harmful effect on the efficiency is the main objective of this research that is accomplished by a simple feed-forward controller. The effectiveness of the proposed gate drive controller is verified by both MATLAB/Simulink and PSIM softwares. Moreover, the new GD is implemented in the experimental setup, and the results are reflected in this paper.