Novel integrated photodetector on Si LSI circuits. Optically controlled MOSFET

We have demonstrated a novel integrated photo-detector on Si large-scale integration circuits. This device integrated the light absorption region on the gate of metal-oxide-semiconductor field-effect transistor (MOSFET), and the long wavelength light controls the current of MOSFET. The GaInAs-InP multiple-quantum-well absorption region and SiO/sub 2/ of the MOSFET were directly bonded. From the experimental results, we confirmed that the light-controlled current was increased by shortening the gate length of the MOSFET, and that an 1850 A/W responsivity was obtained in a 3.5-/spl mu/m gate length device using an irradiation of 1.5-/spl mu/m wavelength light.