Black Phosphorus p- and n-MOSFETs With Electrostatically Doped Contacts

This letter presents a novel device, which is used to realize black phosphorus (BP) p-MOSFETs and nMOSFETs in a single structure by means of electrostatically doped source and drain regions. The devices achieve I
_ON
/I
_OFF
of greater than 10
⁴
at V
_DS
= 1.0 V with only a 14% increase in subthreshold slope from VDS = 0.1 to 1.0 V. These results represent a substantial improvement in OFF-state characteristics over conventional Schottky-contacted BP MOSFETs at high VDS and also pave the way for the realization of novel devices, such as tunneling field-effect transistors.