EM analysis of Ka band multi-throw PIN diode MMIC switches

Advantages and results of using a 3D EM simulator such as HFSS to design a compact integrated circuit (IC) are presented. Any electromagnetic (EM) fields' disturbances and interactions caused by the size and shapes of high frequency circuit elements have a significant effect on IC performance, die size and cost. Two SP4T four-throw PIN diode switches with different topologies are analyzed. The first switch uses a topology of two shunt diode with % wavelength elements. The second switch uses series-series-shunt diode topology. Both switches have integrated bias circuits and DC blocking capacitors. These SP4T switches use the patented MACOM AlGaAs heterojunction PIN Diode process. The optimal performance was achieved due to intense use of the EM simulator.