Broadband 2-stage GaN power amplifier in an 8×8mm package

This paper presents compact two-stage GaN power amplifier devices composed of a printed circuit board (PCB) material. Both the package and printed circuit pattern are designed with the intended application for several frequency bands by selecting discrete lumped passive elements. Output power capability can be adjusted by the choice of active GaN die size. In this paper, a 2.0 GHz-band 20 W device and a 3.6 GHz-band 10 W device are fabricated. High efficiency at saturation of nearly 60 % and 40 % are achieved for 2.0 GHz and 3.6 GHz band, respectively. An excellent gain flatness is also confirmed. This device is well suited for small cell applications as well as driver amplifiers.