Abstract:
150 GHz amplifiers fabricated on a commercial GaAs process with an fT of 135 GHz are presented. The core design achieves a gain of 10 dB or more from 105 to 150 GHz and t...Show MoreMetadata
Abstract:
150 GHz amplifiers fabricated on a commercial GaAs process with an fT of 135 GHz are presented. The core design achieves a gain of 10 dB or more from 105 to 150 GHz and the balanced variant has a bandwidth of 100 to 150 GHz and output power above 8 dBm at 140 GHz. Significantly, this coplanar design was carried out with a model extracted from biased S-parameters up to only 50 GHz taken on a microstrip device with different gate width. The measured S-parameters and output power of the amplifiers agree remarkably well with that predicted by the model.
Date of Conference: 03-04 October 2016
Date Added to IEEE Xplore: 08 December 2016
ISBN Information:
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