A novel high precision adjustment method for the transconductance of a MOSFET

A novel and straightforward technique is introduced to improve the performance of analog and mixed signal circuits. The main idea is that the effective channel width or the transconductance of a MOS transistor can be adjusted by driving a control current through the resistive gate of the device. The gate is unsilicided to obtain the gate resistance of a few hundreds of ohms. In this case, the MOSFET is a five-terminal device, as the gate has two terminals. As a result, the drain current of the five-terminal MOSFET can be adjusted with almost arbitrary precision.