Studies of limitations to peak power and efficiency in diode lasers using extreme-double-asymmetric vertical designs

High power diode lasers with novel extreme-double-asymmetric epitaxial designs with increased modal confinement in the well Γ achieve high efficiency (50%) and powers (14 W) at high continuous wave heatsink temperature (75°C), attributed to the effective suppression of power saturation mechanisms. Prospects for increased performance via further increased Γ are analyzed.