Direct detection of 300GHz using commercial GaAs high electron mobility transistors

This paper reports on direct detection of electromagnetic radiation at 300GHz by using low cost commercially available GaAs high electron mobility field effect transistors (FETs) without any specially attached antennas. The effect of gate voltage bias on the photovoltaic response of the transistor was investigated. Measurements show that conventional RF FETs can be used as broadband THz detectors at room temperature. Additionally, one order of magnitude enhancement in the photovoltaic response was obtained by applying a drain-to-source bias current.