The study of millimeter-wave based quasi-optical photoconductivity decay technique for precise measurement of minority carrier life time

The Quasi-Optical Photoconductivity Decay (QO-PCD) technique is developed by UNIST for precise measurement of minority carrier life time. This technique is suggested to an alternative method for a measurement technique of minority carrier lifetime using millimeter & THz waves. This paper presents a comparison of 2D mapping results between micro-PCD technique and QO-PCD technique. From the measurement result, QO-PCD technique can be an excellent alternative method for measuring minority carrier life time of semiconductors.