RF low-noise amplifiers in BiCMOS technologies

This paper deals with the design of low-noise amplifiers (LNA) fabricated in BiCMOS technologies. The LNA's are based on an active inductor, which makes the topologies less sensitive to temperature variations and reduces the effects of process parameter tolerances. Experimental results show a 10-dB voltage gain at 1 GHz and unity-gain frequencies of 3.6 GHz. The noise figure, measured at 1 GHz, is 3.4 dB. The preamplifier has been fabricated using a 10-GHz BiCMOS technology.