1.17-μm highly strained GaInAs-GaAs quantum-well laser

Excellent lasing properties and temperature characteristic of a highly strained 1.17-μm GaInAs-GaAs double-quantum-well laser are reported. We show that a strained buffer layer, which is employed in the device, has no tradeoff on the device performance. For a 1500-μm-long laser with cleaved facets a threshold current density of 200 A/cm
²
is achieved. A transparency current density of 180 A/cm
²
is estimated for as cleaved devices. A record high characteristic temperature in this wavelength range of 150 K is achieved.