Characterizing nanomaterial photoelectric properties using two photon laser scanning microscopy

Nano-optoelectronic sensors and devices bring tremendous revolutions in photoelectric conversion due to dimension reduced. The device geometry dominates the electron transport so that the spatially resolved optoelectronics properties are critical to characterize device performance. In this paper, it reports a two-photon pulsed laser scanning microscopy method which utilizes raster scan on device with two coherent light beams. By measuring the light induced photon absorption, it reflects the light matter interaction on single or two combined photon. The experimental results have shown that the photon absorption are dependent on surface defect, geometry shape and internal layers in nanoscale optoelectronic devices. The proposed method will not only spatially measure where optical absorption happens but also reveal what phenomenon is exactly generated at sub-micro scale.