Thermal conductivity of 10 nm-diameter silicon nanowires array fabricated by bio-template and neutral beam etching

In this paper, we present the fabrication and thermal conductivity measurements of a 10 nm-diameter Si nanowires (SiNWs) array for thermoelectric (TE) devices applications. The SiNWs were fabricated by bio-template and neutral beam etching techniques. Then, the SiNWs were embedded into spin-on-glass (SOG) for the measurement of the thermal conductivity. The measured thermal conductivities of the SiNWs with lengths of 50 nm and 100 nm were 2.1 ± 0.6 W/mK and 9.5 ± 1.4 W/mK, respectively.