Short Time High-Resistance State Instability of TaOx-Based RRAM Devices

In this letter, TiN/TaO
_y
/Ta
₂
O
_5-x
/Pt-based resistive switching devices were fabricated and tested. Short time high-resistance state instability phenomenon was observed during pulse programming verification measurement. This instability phenomenon was observed in about a minute after the RESET operation for high resistance states. In contrast, the measured low-resistance states after SET operation with current compliance ≥100μA are quite stable. This high resistance short time instability could cause incorrect write operations and reliability issues. Possible mechanisms were proposed to explain this high resistance states short time instability phenomenon of the TaOx-based resistive switching devices.