Growth and investigation SiC based heterostructures

It is known that cubic silicon carbide (3C-SiC) differs from other SiC polytypes in the highest electron mobility (1200 cm
²
/(V s)) [1], which is independent of the crystallographic direction. The rest of the SiC parameters (critical electric field, maximum working temperatures, electron saturation velocity, heat conductivity) differ from the parameters of the hexagonal polytypes only slightly [2]. Thus, 3C-SiC is a rather promising material for development of various kinds of semiconductor devices. In this work epitaxial 3C-SiC layers were grown by sublimation epitaxy in a vacuum. As substrates served semiinsulating substrates of the 4H polytype. The growth was performed on polar C (0001) and Si (0001) faces of the substrate. The growth temperature was 1950-2000
^o
C; growth duration 10 min; area of a 3C-SiC layer, 1 cm
²
. Commercial finely grained silicon carbide powder with grain size of 10-20 μm was used as a source.