InP-based high speed digital logic gates using an RTD/HBT heterostructure

In this paper we report on the design, fabrication, and measurement of InP-based high-speed monolithically integrated static inverter and consensus element. These logic gates were implemented using an MBE-grown stacked-layer epitaxial heterostructure of a resonant-tunneling-diode (RTD) and heterojunction-bipolar-transistor (HBT), the fabricated RTDs showed a peak-to-valley current ratio of 10 at room temperature and the HBT's demonstrated a current gain of 68 and a cutoff frequency (f/sub T/) of 50 GHz. The logic functions of these two fabricated circuits were confirmed up to 6 Gb/s.