High performance GaInAs/AlGaAs quantum-dot light emitting diodes and lasers

We have fabricated GaInAs/AlGas single layer quantum-dot light emitting diodes and lasers by self-organized growth in a molecular beam epitaxy system. Due to the use of migration enhanced epitaxy GaInAs/GaAs quantum-dot electroluminescence with high efficiency at a wavelength of 1.3 /spl mu/m was achieved. The lasers show emission at 0.94 /spl mu/m and 0.99 /spl mu/m with low threshold current densities (J/sub th/=144 A/cm/sup 2/) and high internal quantum efficiencies (95%). Up to a device temperature of 214/spl deg/C ground state lasing was obtained.