Improved homogeneity of LP-MOVPE grown InP/GaInAsP heterostructure for DBR using an optimized liner and susceptor arrangement

Growth of distributed Bragg reflectors and strain compensated MQW for 1550 nm VCSEL have been investigated in a AIX 200/4 LP-MOVPE system with a 3/spl times/2" wafer configuration using an improved liner and susceptor configuration. The shift in the stopband wavelength for DBR could be reduced by one order of magnitude down to +0.6% (+9 nm) within 40 mm diameter compared to the standard setup. For 1420 nm quaternary layers used in such DBR the area with a wavelength shift of less the 1 nm can nearly be doubled. In case of strain compensated MQW a similar improvement in wavelength homogeneity was observed, mainly due to reduced thickness variation from /spl plusmn/2.5% to /spl plusmn/0.8%.