Low temperature growth of GaInAs by MOVPE

GaInAs epitaxial layers were grown at low temperature by Metalorganic Vapor Phase Epitaxy in order to develop metastable semiconductor materials of GaInAsBi. It is found that the limiting factor to lower the growth temperature in this growth system is the decomposition of TEGa in the presence of TMIn. Using InP dummy wafer to decompose the TEGa, GaInAs epilayers of good optical quality were grown even at 420 C.