Process development on the monolithic fabrication of an ultra-compact 4/spl times/4 optical switch matrix on InP-InGaAsP material

We have fabricated an ultra-compact 4/spl times/4 optical matrix on InP/InGaAsP material. 1/spl times/4 MMI couplers and TIR mirrors are employed to produce a compact 1/spl times/2 mm/sup 2/ device. A CH/sub 4//H/sub 2//O/sub 2/ RIE dry etch process has been used to realize two-level dry etching: deep-etch for both the MMI couplers and the mirrors and shallow-etch for the rest of the routing waveguides. It was found that a metal/dielectric bilayer mask is essential for multi-dry-etch processes and high vertical profile. We have found a Ti intermediate mask for the deep-etch process which is removable by SF/sub 6/ dry-etch before the following shallow process. Dry-etch removal of the intermediate mask is necessary to protect the deep-etched mirror sidewall.