Large number of periods in highly strained InGaAlAs/InGaAlAs MQW structures grown by metalorganic vapor-phase epitaxy

We have found that the crystalline quality at the well-barrier interfaces of an InGaAlAs strain-compensated MQW structure grown by MOVPE is much higher than that of an InGaAsP strain-compensated MQW structure, especially for a high strain. A large number of periods (25) in a highly strained (+1.4%) InGaAlAs MQW structure was obtained while preserving high crystalline quality by using the InGaAlAs strain-compensated structure.