Self-aligned CoSi/sub 2/ for 0.18 /spl mu/m and below

CoSi/sub 2/ is being used commonly for the advanced IC technologies. There are several process choices to be made for the formation of a high yielding and reproducible silicide. In this paper the various CoSi/sub 2/ technologies are discussed. The scalability of the process of record, the Co/Ti(cap) process are presented for 0.18 /spl mu/m and below.