A novel technique to determine the lateral distribution of interface states and oxide-trapped charges in LDD MOSFET's

Previous studies showed that simultaneous determination of the interface states (N/sub it/) and oxide-trapped charges (Q/sub ox/) in the vicinity of the drain side of MOS devices are rather difficult. A new technique which allows the simultaneous characterization of the spatial distribution of both N/sub it/ and Q/sub ox/, will be presented. Submicron LDD n-MOS devices were tested as a sample and charge pumping measurement are performed. Moreover, the spatial distributions of interface states and oxide trapped charges have been justified by 2-D device simulation results. Results show that simulated drain current characteristics compare well with experimental data.