Energy band structure tailoring of InGaAsP/InGaAsP quantum well prepared by organometallic vapor phase epitaxy and measured by photoluminescence

We report the theoretical and experimental results of the In/sub x/Ga/sub 1-x/As/sub y/P/sub 1-y//In/sub z/Ga/sub 1-z/As quantum wells (QW). Wafers prepared by low-pressure organometallic vapor phase epitaxy (OMVPE) were studied. The band offset ratios at the heterointerface and material's energy bandgap are determined from the model-solid theory of Van de Walle, while single partical model is used to solve the Schrodinger equation to predict the corresponding wavelength. For unstrained In/sub x/Ga/sub 1-x/As/sub y/P/sub 1-y//In/sub 0.53/Ga/sub 0.47/As quantum wells, the conduction band offset of bandgap difference (dEc%) can be formulated as: (dEc %)unstrained = 42.6 % - (25.4y) %; on the other hand, for strained In/sub x/Ga/sub 1-x/As/sub y/P/sub 1-y//In/sub z/Ga/sub 1-z/As quantum wells, the strain (S) changes the dEc% as: (dEc%)strain=(dEc%)unstrained + 1.3xS. Results of our samples, measured by photoluminescence and transmission electron microscopy measurements, demonstrate good agreements in devised unstrained QW structure with theoretical calculations.