High quality low-temperature GaAs film grown by conventional metalorganic chemical vapor deposition

This paper offers a convenient method to grow good quality of GaAs films at low-temperature ( LT ) , 425 /spl deg/C, by using conventional metalorganic chemical vapor deposition ( MOCVD ) growth technique and taking tertiarybutylarsine ( TBAs ) along with triethylgallium ( TEGa ) as the epitaxial sources . By taking the results from 77 K PL and double crystal X-ray, the film grown at 425 /spl deg/C has shown a full width at half maximum ( FWHM ) 8.2 meV and 14 arcsec . These results indicate that high quality of GaAs films can be obtained by using conventional MOCVD technique without setting any extra and external equipments.