Al/sub 2/O/sub 3/ formation by wet oxidation of AlAs for GaAs MOS device

Thermal oxidation of AlAs/GaAs was performed in N/sub 2/ bubbled H/sub 2/O vapor(95/spl deg/C) at 370 /spl deg/C, 400/spl deg/C, and 430/spl deg/C each for 3 hours. AlAs/GaAs structure was selectively converted to Al/sub 2/O/sub 3//GaAs structure at the oxidation temperature of 400/spl deg/C. From the high frecquency (100kHz) C-V charatersitics, fixed oxide charge density was estimated about 1x 10/sup 11//cm/sup 2/.