Recent developments in N/sub 2/O- and NO-based oxynitride dielectrics for cmos ulsi applications

This paper reviews recent developments in N/sub 2/O- and NO based oxynitride gate dielectrics for CMOS ULSI applications. These dielectrics are extremely attractive due to their process simplicity, thickness controllability, excellent reliability and hot-carrier immunity. In this paper, several issues like growth kinetics, chemical composition, electrical properties and hot-carrier immunity of these dielectrics are discussed. EEPROM applications and thickness scaling issues related to these dielectrics are also discussed.