Loss analysis of Z-source inverter using SiC-MOSFET from the perspective of current path in the short-through mode

This paper discusses suitable short-through mode for a Z-source inverter using SiC-MOSFET to achieve high switching frequency operation. The Z-source inverter has short-through mode for boost operation and several control techniques about short-through mode have been discussed from points of device stress and boost ratio; however, loss analysis from perspective of short-through mode implementation has not been studied well, especially in the case of using SiC-MOSFET. Losses with two types of short-through mode and three switching frequencies are investigated experimentally. As a result, it was confirmed that the conduction loss and switching loss of the Z-source inverter can be reduce by employing a 3-leg short through mode.