Plasma dynamic of RC-IGBT during desaturation pulses

Reverse-conducting IGBTs (RC-IGBTs) allow the modulation of plasma concentration in diode mode. This can be utilized to put the device in a low saturation mode during conduction in diode direction and to reduce the charge before reverse-recovery. [1] This paper gives an insight into the plasma modulation during the desaturation time and the lock time of RC-IGBTs in diode mode. The influence of these two parameters on the reverse-recovery current, the reverse-recovery energy, and the turn-ON energy is discussed.