A novel EMI reduction design technique in IGBT gate driver for turn-on switching mode

This paper proposes a novel insulated gate bipolar transistor (IGBT) gate driver. The new gate driver (GD) has positive effect on the injected gate current to enhance the IGBT switching mechanism. The approach is based on the Posicast control method. Simple structure is the most important advantage of this feedforward controller. The main objective is to improve turn-on switching transients without harmful effect on the IGBT efficiency. The electro-magnetic interface (EMI) reduction has been discussed as another important benefit of this control method.