8 mm GaAs power monolithic integrated circuit

The design, fabrication and performance measurement of an 8 mm monolithic IC based on a GaAs MESFET device with a 0.4 /spl mu/m gate width are presented. The performance characteristics of the MIMIC are: Pout>100 mW, Ga>3 dB, Poutmax=150 mW at 32-33 GHz.