Application of SiGe heterojunction transistors in silicon based monolithic millimeter-wave integrated circuits

Silicon-based millimeter-wave integrated circuits are playing more and more important roles in high frequency microwave electronics. Recent progress in SiGe device technology has improved cutoff frequencies of these devices to beyond 110 GHz. Such high speed transistors, compatible with standard, industrial Si production lines, allow low cost, high level integration and make the fabrication of silicon-based monolithic millimeter-wave integrated circuits (MIMICs) a genuine possibility. This paper presents a one dimensional calculation of the transistor performance and the trade-offs available to operate this device at millimeter-waves frequencies. The device structure of a SiGe heterojunction bipolar transistor and the Si-SiGe MIMIC technology are discussed.