Rapid estimation technology for highly reliable GaAs power field-effect transistor in C band

This paper introduces a way of rapidly estimating a GaAs microwave power FET-temperature accelerated life test. It is used to estimate the reliability of a DX0011 type GaAs microwave power FET. When the bias is V/sub Ds/=8V, I/sub DS/=375 mA, and the channel temperature T/sub ch/=110%, the failure rate under 10 years operation is /spl lambda//spl ap/27FIT. The main failure mode is I/sub DSS/ degradation, and the activation energy is about 1.28 eV.