Performance enhancement of InGaAs/InP quantum well lasers by both tensile and compressive strain

We report a remarkable improvement in strained InGaAs/InP quantum well (QW) lasers both for Fabry-Perot (F-P) and DFB lasers grown by MOVPE, due to the reduced internal loss for both tensile and compressive strain. F-P-QW lasers with tensile strain show highest output power over 200 mW whereas in DFB lasers, an output of 100 mW in single longitudinal mode was observed.