0.35 /spl mu/m, 43 /spl mu//spl Omega/cm/sup 2/, 6 m/spl Omega/ power MOSFET to power future microprocessor

In this paper, a lateral power MOSFET using 0.35 /spl mu/m VLSI CMOS technology is demonstrated to have a 6 m/spl Omega/ on-resistance and a gate charge of 2.7 nC. For high frequency, low voltage power switching conversion applications, the deep sub-micron CMOS/BiCMOS based technology is clearly superior to conventional vertical power MOSFET technology.