A GaN UV Light Emitting Diode

In our studies, p-n junction LEDs were grown by MOCVD on (0001) sapphire substrates. The vertical MOCVD reactor has separate inlets for ammonia (NH
₃
) and the metalorganics. The system held a pressure of 76 Torr with a constant hydrogen flow of 1.9 l/min. Source materials for this reactor included triethylaluminum (TEA), triethylgallium (TEG), bismethylcyclopentadienyl magnesium (MCp
₂
Mg) and silane (SiH
₄
.