A zero DC-power low-distortion mixer for wireless applications

A fully integrated passive field-effect transistor (FET) mixer with a measured conversion loss of 7 dB and a -1 dB input compression point of -1.5 dBm at 1.9 GHz was fabricated in a standard 0.6 μm GaAs MESFET process. Zero DC-power consumption, excellent dynamic performance, and low loss make this circuit very suitable for low-power low-voltage wireless applications.