Channel length dependence of hot-carrier degradation of LATID-n-MOSFETs under analog operation

We investigate the hot-carrier degradation of large angle tilted implementation drain n-MOSFETs (LATID-n-MOSFETs) using specific stress techniques related to the operating conditions of analog CMOS applications. Under these conditions, we find a hot-carrier induced damage proportional to the inverse value of the channel length. The drain current degradation caused by this damage is proportional to (channel length)/sup S+1/, with S+1=2 in linear mode and S+1>2 in saturation mode. The physical insight achieved yields important information for analog CMOS reliability.