Modular approach of a high current MOS compact model for circuit-level ESD simulation including transient gate coupling behavior

A novel modular strategy for highly flexible modeling of ESD-capable MOS compact models is introduced. These high current MOS models comprise the important gate coupling effect and an approximated formulation for the avalanche multiplication factor. This enormously enhances the computation stability and performance of the model. An easy but accurate parameter extraction procedure is described. Measurement and simulation of an application example employing the new ESD-model within a CMOS output driver exhibit the relevance of dynamic gate coupling for the ESD reliability of the circuit.