Reduced short-channel effects in submicron N-HIGFET technology using sidewalls

In this letter, 0.35 μm gate length pseudomorphic AlGaAs/InGaAs/GaAs heterostructure insulated-gate field-effect-transistors (HIGFETs) have been fabricated on GaAs. The short-channel effects have been reduced by using a sidewall technology. A high current density and a high transconductance were obtained, reflectively, 510 mA/mm and 550 mS/mm, in addition to a high value of extrinsic current gain cutoff frequency F
_T
=44 GHz. The dependencies of subthreshold current, threshold voltage, and output conductance on gate length have been emphasised.