Experimental Study Of Electron Heating In 0.1/spl mu/-n MOSFETs

In this paper we demonstrate the importance of electron heating at relatively low average lateral fields (10^3 - 10^4 V/cm) in ultra-small MOSFET's with measurements of random telegraph signals (RTS) and Shubnikov - de Haas (SdH) oscillations at low temperatures. Hot carrier degradation in these devices is investigated.