A 29mm/sup 2/ 1.8 V-only 16 Mb DINOR flash memory with gate-protected poly-diode (GPPD) charge pump

1.8 V-only 16 Mb CMOS divided-bit line-NOR (DINOR) flash memory with alternating background-operation (BGO) capability has 72 ns random access time. The EGO feature allows program or erase in one bank while the device simultaneously allows read in the other bank. This BGO feature is suitable for mobile and personal computing, and communication products. This memory is fabricated using a 0.25 /spl mu/m-design-rule, triple-layer-metal, triplewell CMOS. The cell is 0.80/spl times/0.85 /spl mu/m/sup 2/ and the chip is 4.93/spl times/5.88 mm/sup 2/.