Y-Doped BaTiO3 as a Charge-Trapping Layer for Nonvolatile Memory Applications

The charge-trapping properties of Y-doped BaTiO
₃
(Y-BTO) are investigated using an Al/Al
₂
O
₃
/Y-BTO/SiO
₂
/Si structure. Compared with the memory capacitor with pure BaTiO
₃
, the one with Y doping shows better charge-trapping characteristics, including larger memory window (7.4 V at ±14 V sweeping voltage), higher program speed (7.5 V at +14 V for 100 μs) and better retention (96% retained charge at 298 K after 104 s) due to its higher trapping efficiency resulted from the higher trap density of Y-BTO and higher-quality Y-BTO/SiO
₂
interface, both induced by the Y doping. Therefore, Y-BTO is a promising candidate as the charge-trapping layer for nonvolatile memory applications.