Experimental study of MOS electron injectors in silicon detectors

This work is focused on Metal-Oxide-Semiconductor (MOS) injector devices for the calibration of the semiconductor detectors' response by means of the point injection of electron charge. The amount of injected charge depends on several parameters such as pulse amplitude, width and repetition rate, injector DC bias voltage and geometrical properties. We present a multi-parameter experimental study aimed at clarifying the MOS injector physical mechanism and the inter-relationships among the relevant parameters. MOS injectors of different geometries have been inserted in a multi-linear silicon drift detector prototype for evaluation purpose. The set of obtained experimental results allows the development of a suitable model for better understanding and for the optimization of the injector design.