Physical transport simulation for path-finding and device optimization

We present a novel simulation approach for transport modeling in nano-scaled devices. It is based on the solution of the Boltzmann transport equation (BTE) in phase space using a k·p-based electronic structure model and includes all relevant scattering processes. The modeling framework is suitable low and high V
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regime and consistently covers all the necessary physics like confinement, velocity overshoot, and quantum resistance to give meaningful predictions using only few material parameters. With a highly efficient numerical implementation, the approach is suitable for both path-finding and device optimization.