Interface and oxide trap analysis at tunnel oxide of NAND flash memory with excluding the effect of floating gate

Charge trap characteristic at tunneling oxide of floating gate NAND flash observed after program/erase (P/E) cycling. At initial P/E cycling, acceptor-like interface traps and positive oxide traps are generated simultaneously but the effect of interface trap is dominant and consequently threshold voltage increase. However, once the interface traps are generated, change of interface trap is negligible under program or erase operation and threshold voltage variation mainly depends on oxide traps. Additionally, voltage acceleration factor of threshold voltage change at low erase voltage is extracted for relative reliability test of NAND flash memory devices.